(IRF640NPBF(TO220AB اصلی
- موجودی: 221
- مدل: Mosfet N chanel
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Product Attributes | Select All | |
Datasheets | IRF640N(S,L)PbF | |
---|---|---|
Transistors - FETs, MOSFETs - Single | ||
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
Packaging | Tube | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 200V | |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V | |
FET Feature | -ترانزیستور | |
Power Dissipation (Max) | 150W (Tc) | |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220AB | |
Package / Case | TO-220-3 |
نوع بسته بندی + قیمت ارزی (یوان) | ||
قیمت ارزی (یوان) | ||
---|---|---|
تعداد در کارتن | 1000عدد | |
تعداد در رول | 50عدد |
برچسب ها:
MOSFET